EPC-660-0.5 Datasheet, PDF (1/2 Pages) EPIGAP optoelectronic GmbH – Photodiode-Chip

Photodiode-Chip
Preliminary
Wavelength range
Red, selective
460
360
300
Type
Integrated filter
11.04.2007
Technology
AlGaAs/GaAs
typ. dimensions (µm)
EPC-660-0.5
rev. 06/07
Electrodes
P (anode) up
typ. thickness
260 (±25) µm
anode
gold alloy, 1.5 µm
Description
Narrow response range
(660 nm peak)
cathode
gold alloy, 0.5 µm
Applications
Optical communications,
safety equipment, light
barriers
Miscellaneous Parameters
T_amb = 25°C, unless otherwise specified
Parameter
Test сonditions
Symbol
Value
Unit
Active area
Operating temperature range
Storage temperature range
A
T_amb
T_stg
0,17
-40 to +125
-40 to +125
mm²
°C
°C
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Typ
Max
Unit
Peak sensitivity wavelength V_R = 0 V
λ_P
660
nm
Spectral range at 50 %
V_R = 0 V
λ_0.5
620
700
nm
Responsivity at λ_P1
V_R = 0 V
S_λ
0.20
A/W
Responsivity at λ_P2
V_R = 0 V
S_λ
0.42
A/W
Spectral bandwidth at 50%
V_R = 0 V
∆λ_0.5
80
nm
Dark current
V_R = 1 V
I_D
40
200
pA
Junction capacitance
V_R = 0 V
C_J
40
pF
Switching time
V_R = 1 V
t_r, t_f
15/30
ns
1_{Measured on bare chip on TO-18 header}
2_{Measured on epoxy covered chip on TO-18 header}
Labeling
Type
Typ. I_D [pA] Typ. S_λ[A/W]
EPС-660-0.5
Packing: Chips on adhesive film with wire-bond side on top
*Note: All measurements carried out with EPIGAP equipment
Lot N°
Quantity
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
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