EPC-525-2.5 Datasheet, PDF (1/3 Pages) EPIGAP optoelectronic GmbH – Photodiode-Chip

Photodiode-Chip
Preliminary
Wavelength range
Green, selective
Type
Integrated filter
11.04.2007
Technology
GaP
EPC-525-2.5
rev. 03/07
Electrodes
P (anode) up
2460
1775
1735
PD-14
Ø100
typ. dimensions (µm)
typ. thickness
270 (±20) µm
anode
gold alloy, 1.5 µm
cathode
gold alloy, 0.5 µm
Description
Narrow bandwidth and
high spectral sensitivity in
the range of max. eye
responsivity (480…560
nm), low cost chip
Applications
Nearly V גmatched
detection, measurement
systems, daylight sensors
Miscellaneous Parameters
T_amb = 25°C, unless otherwise specified
Parameter
Active area
Operating temperature range
Storage temperature range
Temperature coefficient of I_D
Temperature coefficient of I_PH
Temperature coefficient of λ_c
Test сonditions
T = -40…120°C
T = -40…120°C
T = -40…120°C
Symbol
Value
A
T_amb
T_stg
TC_ID
TC_IPH
TC_λc
5.8
-40 to +125
-40 to +125
4.7
0.25
0.15
Unit
mm²
°C
°C
%/K
%/K
nm/K
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Typ
Spectral range at 0.5 max.
V_R = 0 V
λ_0.5
480
Responsivity at 525 nm¹
V_R = 0 V
S_λ
0.04
0.08
Responsivity at 525 nm²
V_R = 0 V
S_λ
0.15
0.25
Spectral bandwidth at 50%
V_R = 0 V
∆λ_0,5
75
Dark current (E_e = 0 W/m²)
V_R = 5 V
I_D
5
Central sensitivy wavelength
V_R = 0 V
λ_C
1_{Measured on bare chip on TO-18 header}
2_{Measured on epoxy covered chip on TO-18 header}
510
525
Labeling
Type
Typ. I_D [pA] Typ. S_λ[A/W]
Lot N°
EPС-525-2.5
Packing: Chips on adhesive film with wire-bond side on top
*Note: All measurements carried out with EPIGAP equipment
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
Max
Unit
560
nm
0.15
A/W
0.38
A/W
nm
30
pA
535
nm
Quantity
1 of 3