|
EPC-525-1.4 Datasheet, PDF (1/3 Pages) EPIGAP optoelectronic GmbH – Photodiode-Chip | |||
|
Photodiode-Chip
Preliminary
Wavelength range
Green, selective
Type
Integrated filter
11.04.2007
Technology
GaP
EPC-525-1.4
rev. 03/07
Electrodes
P (anode) up
1360
1000
960
PD-13
Ã100
Miscellaneous Parameters
Tamb = 25°C, unless otherwise specified
Parameter
Active area
Operating temperature range
Storage temperature range
Temperature coefficient of ID
Temperature coefficient of IPH
Temperature coefficient of λc
typ. dimensions (µm)
typ. thickness
270 (±20) µm
anode
gold alloy, 1.5 µm
cathode
gold alloy, 0.5 µm
Description
Narrow bandwidth and
high spectral sensitivity in
the range of max. eye
responsivity (480â¦560
nm), low cost chip
Applications
Nearly V ×matched
detection, measurement
systems, daylight sensors
Test Ñonditions
T = -40â¦120°C
T = -40â¦120°C
T = -40â¦120°C
Symbol
Value
A
Tamb
Tstg
TCID
TCIPH
TCλc
1.79
-40 to +125
-40 to +125
4.7
0.25
0.15
Unit
mm²
°C
°C
%/K
%/K
nm/K
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Typ
Spectral range at 0.5 max.
VR = 0 V
λ0.5
480
Responsivity at 525 nm1
VR = 0 V
Sλ
0.04
0.08
Responsivity at 525 nm2
VR = 0 V
Sλ
0.15
0.25
Spectral bandwidth at 50%
VR = 0 V
âλ0,5
75
Dark current (Ee = 0 W/m²)
VR = 5 V
ID
5
Central sensitivy wavelength
VR = 0 V
λC
1Measured on bare chip on TO-18 header
2Measured on epoxy covered chip on TO-18 header
510
525
Labeling
Type
Typ. ID [pA] Typ. Sλ[A/W]
Lot N°
EPС-525-1.4
Packing: Chips on adhesive film with wire-bond side on top
*Note: All measurements carried out with EPIGAP equipment
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
Max
Unit
560
nm
0.15
A/W
0.38
A/W
nm
30
pA
535
nm
Quantity
1 of 3
|
▷ |