EPC-525-0.9-1 Datasheet, PDF (1/2 Pages) EPIGAP optoelectronic GmbH – Photodiode-Chip

Photodiode-Chip
Preliminary
Wavelength range
Green, selective
Type
Integrated filter
26.04.2007
Technology
GaP
EPC-525-0.9-1
rev. 09/07
Electrodes
P (anode) up
860
typ. dimensions (µm)
Ø120
PD-08
typ. thickness
270 (±20) µm
anode
gold alloy, 1.5 µm
cathode
gold alloy, 0.5 µm
Description
Narrow bandwidth and
high spectral sensitivity in
the range of max. eye
responsivity (480..560 nm),
low cost chip
Applications
Nearly V גmatched
detection, measurement
systems, daylight sensors
Miscellaneous Parameters
T_amb = 25°C, unless otherwise specified
Parameter
Test сonditions
Symbol
Value
Unit
Active area
Operating temperature range
Storage temperature range
Temperature coefficient of I_D
Temperature coefficient of I_PH
Temperature coefficient of λ_c
T = -40…120°C
T = -40…120°C
T = -40…120°C
A
T_amb
T_stg
T_C(I_D)
T_C(I_Ph)
T_C(λ_c)
0.73
-40 to +125
-40 to +125
4.7
0.25
0.15
mm²
°C
°C
%/K
%/K
nm/K
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Dark current
V_R = 5 V
I_D
Responsivity at 525 nm¹⁾
V_R = 0 V
S_λ
Responsivity at 525 nm²⁾
V_R = 0 V
S_λ
Peak sensitivity wavelength
V_R = 0 V
λ_p
Sensitivity range at 1% ¹⁾
V_R = 0 V
λ_min, λ_max
Spectral bandwidth at 50%
V_R = 0 V
∆λ_0.5
Dark resistance
V_R = 10 mV
R_D
Noise equivalent power¹⁾
λ = 525 nm
NEP
Junction capacitance
V_R = 0 V
C_J
Switching time (R_L = 50 Ω)
V_R = 1 V
t_r, t_f
1)_{Measured on bare chip on TO-18 header}
2)_{Measured on epoxy covered chip on TO-18 header}
Min
Typ
Max
5
30
0.04
0.08
0.15
0.3
525
410
580
70
350
1.6x10^-14
100
35
Unit
pA
A/W
A/W
nm
nm
nm
GΩ
WHz^1/2
pF
ns
Labeling
Type
Typ. I_D [pA] Typ. S_λ[A/W]
Lot N°
EPС-525-0.9-1
Packing: Chips on adhesive film with wire-bond side on top
*Note: All measurements carried out with EPIGAP equipment
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
Quantity
1 of 2