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EPC-470-0.9-1 Datasheet, PDF (1/2 Pages) EPIGAP optoelectronic GmbH – Photodiode-Chip
Photodiode-Chip
Preliminary
Wavelength range
Blue, selective
Type
Integrated filter
11.04.2007
Technology
GaP
EPC-470-0.9-1
rev. 02/06
Electrodes
P (anode) up
860
typ. dimensions (µm)
Ø120
PD-08
typ. thickness
300 (± 40) µm
anode
gold alloy, 1.5 µm
cathode
gold alloy, 0.5 µm
Description
Narrow bandwidth and
high spectral sensitivity in
blue-green range
(425..525 nm), low cost
chip
Applications
Fluorescence detection,
measurement systems,
color sensors
Miscellaneous Parameters
Tamb = 25°C, unless otherwise specified
Parameter
Test сonditions
Symbol
Active area
Temperature coefficient of ID
Temperature coefficient of IPH
Operating temperature range
Storage temperature range
T = -40…120°C
T = -40…120°C
A
TC(ID)
TC(IPH)
Tamb
Tstg
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Reverse voltage3
IR = 10 µA
VR
Dark current (Ee = 0 W/m²)
VR = 5 V
ID
Central sensitivy wavelength
VR = 0 V
λC
Responsivity at λC1
Responsivity at λC2
VR = 0 V
Sλ
VR = 0 V
Sλ
Spectral range at 0.5 max.
VR = 0 V
λ0.5
Sensitivity range at 1%
VR = 0 V
λmin, λmax
Spectral bandwidth at 50%
VR = 0 V
1Measured on bare chip on TO-18 header
2Measured on epoxy covered chip on TO-18 header
3information only
∆λ0,5
Labeling
Type
Typ. ID [pA] Typ. Sλ[A/W]
EPС-470-0.9-1
Packing: Chips on adhesive film with wire-bond side on top
Min
Typ
5
5
460
470
0.18
0.30
425
380
100
Lot N°
*Note: All measurements carried out with EPIGAP equipment
Value
0.72
5.0
0.15
-40 to +125
-40 to +125
Unit
mm²
%/K
%/K
°C
°C
Max
Unit
V
30
pA
480
nm
A/W
A/W
525
nm
570
nm
nm
Quantity
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
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