EPC-470-0.5 Datasheet, PDF (1/2 Pages) EPIGAP optoelectronic GmbH – Photodiode-Chip

Photodiode-Chip
Preliminary
Wavelength range
Blue, selective
Type
Integrated filter
11.04.2007
Technology
GaP
EPC-470-0.5
rev. 07/07
Electrodes
P (anode) up
460
typ. dimensions (µm)
360
300
typ. thickness
300 (± 40) µm
anode
gold alloy, 1.5 µm
cathode
gold alloy, 0.5 µm
Description
Narrow bandwidth and
high spectral sensitivity in
blue-green range
(425…525 nm), low cost
chip
Applications
Fluorescence detection,
measurement systems,
color sensors
Miscellaneous Parameters
T_amb = 25°C, unless otherwise specified
Parameter
Active area
Temperature coefficient of I_Ph
Temperature coefficient of I_D
Operating temperature range
Storage temperature range
Test сonditions
T = -40…120°C
T = -40…120°C
Symbol
Value
A
T_C(I_Ph)
T_C(I_D)
T_amb
T_stg
0.17
0.15
1.05
-40 to +125
-40 to +125
Unit
mm²
%/K
1/K
°C
°C
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Reverse voltage³
I_R = 10 µA
V_R
5
Dark current (E_e = 0 W/m²)
V_R = 5 V
I_D
Central sensitivy wavelength
V_R = 0 V
λ_C
460
Responsivity at λ_C1
V_R = 0 V
S_λ
Responsivity at λ_C2
V_R = 0 V
S_λ
Spectral range at 0.5 max.
V_R = 0 V
λ_0.5
425
Sensitivity range at 1%
V_R = 0 V
λ_min, λ_max
380
Spectral bandwidth at 50%
V_R = 0 V
1_{Measured on bare chip on TO-18 header}
2_{Measured on epoxy covered chip on TO-18 header}
3_{information only}
∆λ_0,5
Labeling
Typ
5
470
0.18
0.30
100
Type
Typ. I_D [pA] Typ. S_λ[A/W]
Lot N°
EPС-470-0.5
Packing: Chips on adhesive film with wire-bond side on top
*Note: All measurements carried out with EPIGAP equipment
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
Max
Unit
V
30
pA
480
nm
A/W
A/W
525
nm
570
nm
nm
Quantity
1 of 2