EPC-440-0.9 Datasheet, PDF (1/2 Pages) EPIGAP optoelectronic GmbH – Photodiode-Chip

Photodiode-Chip
Preliminary
Wavelength range
UV-blue-green
Type
Schottky Contact
11.04.2007
Technology
GaP
EPC-440-0.9
rev. 04/07
Electrodes
P (anode) up
860
typ. dimensions (µm)
800
720
typ. thickness
300 µm
anode
gold alloy, 1.5 µm
Description
High spectral sensitivity in
the blue and ultraviolet
range, low dark currents,
low cost chip with high
degradation stability
cathode
gold alloy, 0.5 µm
Applications
special light barriers,
sensors for flame control
and automation
PD-03
Miscellaneous Parameters
T_amb = 25°C, unless otherwise specified
Parameter
Active area
Temperature coefficient of I_D
Operating temperature range
Storage temperature range
Test сonditions
Symbol
A
T_C(I_D)
T_amb
T_stg
Value
0.51
1.07
-40 to +125
-40 to +125
Unit
mm²
1/K
°C
°C
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Dark current
V_R = 5 V
I_D
Peak sensitivity wavelength V_R = 0 V
λ_p
Responsivity at λ_P *
V_R = 0 V
S_λ
Sensitivity range at 1%
V_R = 0 V
λ_min, λ_max
<110
Spectral bandwidth at 50%
V_R = 0 V
∆λ_0.5
Shunt resistance
V_R = 10 mV
R_D
100
Noise equivalent power
λ = 440 nm
NEP
Junction capacitance
V_R = 0 V
C_J
Switching time
V_R = 5 V
t_r, t_f
*Measured on bare chip on TO-18 header with EPIGAP equipment
Typ
5
440
0.17
180
125
7.7x10^-15
120
0.7/13
Labeling
Type
EPC-440-0.9
Typ. I_D [pA] Typ. S_λ[A/W]
Lot N°
Packing: Chips on adhesive film with wire-bond side on top
Max
Unit
20
pA
nm
A/W
570
nm
nm
GΩ
W/ Hz
pF
ns
Quantity
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
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