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EPC-1300-1.0-1 Datasheet, PDF (1/2 Pages) EPIGAP optoelectronic GmbH – Photodiode-Chip
Photodiode-Chip
EPC-1300-1.0-1
16.05.2008
rev. 04
Wavelength range
Infrared
Type
Planar
Technology
InGaAs/InP
Electrodes
P (anode) up
1350 ±20
Ø1000
typ. dimensions in µm
2
Ø150
Ø150
Miscellaneous Parameters
Tamb = 25°C, unless otherwise specified
Parameter
Active area
Operating temperature range
Storage temperature range
Temperature coefficient of ID
typ. thickness
330 (±20) µm
anode (pin 1)
Description
Broadband photodiode with
maximum response in the
NIR-region (800-1750 nm)
bond gold 1.0 µm
1
cathode (rear*)
Applications
gold alloy, 0.5 µm
*also pin 2, for measuring
purposes
Optical communications,
safety equipment, light
barriers
Test сonditions
T = -40…120°C
Symbol
A
Tamb
Tstg
TC(ID)
Value
0.78
-40 to +125
-40 to +125
7.4
Unit
mm²
°C
°C
%/K
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Parameter
Test
conditions
Forward voltage
IF = 10 mA
Breakdown voltage2)
IR = 10 µA
Sensitivity range at 10 %
VR = 0 V
Spectral bandwidth at 50 %
Responsivity at 1300 nm1)
VR = 0 V
VR = 0 V
Dark current
VR = 5 V
Shunt resistance
VR = 10 mV
Noise equivalent power
λ = 1300 nm
Specific detectivity
λ = 1300 nm
Junction capacitance
VR = 0 V
1)measured on bare chip on TO-18 header
2)for information only
Symbol
VF
VR
λ
∆λ0,5
Sλ
ID
RSH
NEP
D*
CJ
Min
Typ
0.6
5
800
680
0.9
0.5
15
30
3.0x10-14
2.9x1012
130
Labeling
Type
Typ. ID [nA] Typ. Sλ[A/W]
EPС-1300-1.0-1
Packing: Chips on adhesive film with wire-bond side on top
Lot N°
Max
1750
10
Unit
V
V
nm
nm
A/W
nA
MΩ
W/ Hz
cm ⋅ Hz ⋅ W −1
pF
Quantity
*Note: All measurements carried out with EPIGAP equipment
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each application by the customers themselves.
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
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