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EPC-1300-0.22-1 Datasheet, PDF (1/2 Pages) EPIGAP optoelectronic GmbH – Photodiode-Chip
Photodiode-Chip
Wavelength range
Infrared
220
Type
Planar
EPC-1300-0.22-1
16.05.2008
rev. 08
Technology
Electrodes
InGaAs/InP
P (anode) up
typ. dimensions in µm
1
110
100
2
460 ±20
typ. thickness
330 (±20) µm
anode (pin 1)
bond gold 1.0 µm
cathode (rear*)
gold alloy, 0.5 µm
*also pin 2, for measuring
purposes
Description
Infrared-selective photodiode
with response range in the
NIR-region (800 - 1750 nm)
Applications
Optical communications,
safety equipment, light
barriers
Miscellaneous Parameters
Tamb = 25°C, unless otherwise specified
Parameter
Test сonditions
Symbol
Value
Unit
Active area
Operating temperature range
Storage temperature range
Temperature coefficient of ID
T = -40…120°C
A
Tamb
Tstg
TC(ID)
0.032
-40 to +125
-40 to +125
7.4
mm²
°C
°C
%/K
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Parameter
Test
conditions
Forward voltage
IF = 10 mA
Breakdown voltage2)
IR = 10 µA
Sensitivity range at 10 %
VR = 0 V
Spectral bandwidth at 50 %
Responsivity at 1300 nm1)
VR = 0 V
VR = 0 V
Dark current
VR = 5 V
Shunt resistance
VR = 10 mV
Noise equivalent power
λ =1300 nm
Specific detectivity
λ = 1300 nm
Junction capacitance
VR = 0 V
1) measured on bare chip on TO-18 header
2) for information only
Symbol
VF
VR
λ
∆λ0,5
Sλ
ID
RSH
NEP
D*
CJ
Min
Typ
Max
Unit
1.7
V
5
V
800
1750
nm
680
nm
0.9
A/W
30
200
pA
3
5
GΩ
4.0x10-15
4.5x1012
W/ Hz
cm ⋅ Hz ⋅ W −1
11
pF
Labeling
Type
Typ. ID [pA] Typ. Sλ[A/W]
EPС-1300-0.22-1
Packing: Chips on adhesive film with wire-bond side on top
Lot N°
Quantity
*Note: All measurements carried out with EPIGAP equipment
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each application by the customers themselves.
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
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