ELS-880-894 Datasheet, PDF (1/1 Pages) EPIGAP optoelectronic GmbH – SMD-LED

SMD-LED
Radiation
Infrared
Type
SMD
1,25
0,4
Cathode mark
Die
0,9
All dimensions in mm
Tolerances: ±0,1mm
ELS-880-894
16.11.2007
rev. 04
Technology
AlGaAs/AlGaAs
Case
SMD 0805
Description
High-power, high speed LED in standard
SMD package, compact design allows for
easy circuit board mounting or
assembling of arrays
Applications
Optical communications, remote control
and light barriers, measurement
applications and security systems,
automation
Absolute Maximum Ratings
at T_amb = 25°C, unless otherwise specified
Parameter
DC forward current
Peak forward current
Power dissipation
Operating temperature range
Storage temperature range
Test сonditions
t_p ≤ 10 µs, t_p/T ≤ 0.1
Electrical and Optical Characteristics
at T_amb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Forward voltage
I_F = 20 mA
V_F
Reverse voltage
I_F = 100 µA
V_R
5
Radiant power
I_F = 100 mA
Φ_e
4.6
Radiant intensity
I_F = 100 mA
Ι_e
1.25
Peak wavelength
I_F = 100 mA
λ_p
860
Spectral bandwidth at 50% I_F = 100 mA
∆λ_0.5
Viewing angle
I_F = 100 mA
ϕ
Switching time
I_F = 100 mA
t_r , t_f
Note: All measurements carried out with EPIGAP equipment
Symbol
Value
Unit
I_F
50
mA
I_FM
100
mA
P
100
mW
T_amb
-40 to +85
°C
T_stg
-55 to +100
°C
Typ
Max
Unit
1,6
1,9
V
V
6.0
mW
1.6
mW/sr
875
890
nm
30
nm
120
deg.
20
ns
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer.
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
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