ELS-870-195 Datasheet, PDF (1/1 Pages) EPIGAP optoelectronic GmbH – SMD-LED

SMD-LED
Radiation
Infrared
2
0,3
R
3,2
Type
SMD
all dimensions: mm
all tolerances: ± 0,1
pad 1,15 x 1,0
cathode
ELS-870-195
16.11.2007
rev. 04
Technology
AlGaAs/AlGaAs
Case
SMD 1206
Description
High-power, high speed LED in standard
SMD package, compact design allows for
easy circuit board mounting and
assembling of arrays
Applications
Optical communications, remote control,
light barriers, measurement applications
and security systems, automation
Absolute Maximum Ratings
at T_amb = 25°C, unless otherwise specified
Parameter
DC forward current
Peak forward current
Surge forward current
Power dissipation
Operating temperature range
Storage temperature range
Test сonditions
t_p ≤ 50 µs, t_p/T ≤ 0.5
t_p ≤ 10 µs
Electrical and Optical Characteristics
at T_amb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Forward voltage
I_F = 100 mA
V_F
Reverse voltage
I_F = 100 µA
V_R
5
Radiant power
I_F = 100 mA
Φ_e
15
Peak wavelength
I_F = 100 mA
λ_p
865
Spectral bandwidth at 50% I_F = 100 mA
∆λ_0.5
Viewing angle
I_F = 100 mA
ϕ
Switching time
I_F = 100 mA
t_r , t_f
Note: All measurements carried out with EPIGAP equipment
Symbol
Value
Unit
I_F
100
mA
I_FM
200
mA
I_SFM
2000
mA
P
200
mW
T_amb
-20 to +85
°C
T_stg
-55 to +100
°C
Typ
Max
Unit
1,5
2,0
V
V
20
mW
875
890
nm
45
nm
120
deg.
25
ns
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer.
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
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