ELS-870-195-1 Datasheet, PDF (1/1 Pages) EPIGAP optoelectronic GmbH – SMD-LED

SMD-LED
Radiation
Infrared
Type
SMD
ELS-870-195-1
16.11.2007
rev. 04
Technology
AlGaAs/AlGaAs
Case
SMD 1206
1,6
0,5
Cathode mark
Die
Description
High-power, high speed LED in standard
SMD package, compact design allows for
easy circuit board mounting or
assembling of arrays
1,05
All dimensions in mm
Tolerances: ±0,1mm
Applications
Optical communications, remote control
and light barriers, measurement
applications and security systems,
automation
Absolute Maximum Ratings
at T_amb = 25°C, unless otherwise specified
Parameter
DC forward current
Peak forward current
Power dissipation
Operating temperature range
Storage temperature range
Test сonditions
t_p ≤ 10 µs, t_p/T ≤ 0.1
Symbol
Value
Unit
I_F
100
mA
I_FM
1000
mA
P
200
mW
T_amb
-20 to +85
°C
T_stg
-30 to +100
°C
Electrical and Optical Characteristics
at T_amb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Typ
Max
Unit
Forward voltage
I_F = 20 mA
V_F
1,4
1,7
V
Forward voltage
I_F = 100 mA
V_F
1,5
V
Reverse voltage
I_F = 10 µA
V_R
5
V
Radiant power
I_F = 100 mA
Φ_e
20
25
mW
Radiant intensity
I_F = 100 mA
Ι_e
7,2
mW/sr
Peak wavelength
I_F = 100 mA
λ_p
850
870
880
nm
Spectral bandwidth at 50% I_F = 100 mA
∆λ_0.5
40
nm
Viewing angle
I_F = 100 mA
ϕ
150
deg.
Switching time
I_F = 100 mA
t_r , t_f
15
ns
Note: All measurements carried out with EPIGAP equipment
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer.
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
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