ELS-750-134 Datasheet, PDF (1/1 Pages) EPIGAP optoelectronic GmbH – SMD-LED

SMD-LED
Radiation
Infrared
Type
SMD
1600
500
R
750
m arking
1900
Anode
marking
back side
ELS-750-134
16.11.2007
rev. 04
Technology
AlGaAs/AlGaAs
Case
SMD 1206, lens
Ca tho de
Description
High speed, high power LED in standard
SMD package with lens, compact design
allows for easy circuit board mounting
and assembling of arrays
Anode
Applications
unit: µm
tolerance: ± 100µm
Optical communications, remote control,
light barriers, measurement applications
and security systems, automation
Absolute Maximum Ratings
at T_amb = 25°C, unless otherwise specified
Parameter
Test сonditions
Symbol
Value
Unit
DC forward current
Peak forward current
Power dissipation
I_F
t_p ≤ 100 µs, t_p/T ≤ 0.1
I_FM
P
50
mA
150
mA
90
mW
Operating temperature range
Storage temperature range
T_amb
-40 to +85
°C
T_stg
-40 to +90
°C
Electrical and Optical Characteristics
at T_amb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Typ
Max
Unit
Forward voltage
I_F = 50 mA
V_F
1,9
2,3
V
Reverse voltage
I_F = 100 µA
V_R
5
V
Radiant power
I_F = 50 mA
Φ_e
13
mW
Peak wavelength
I_F = 50 mA
λ_p
740
750
760
nm
Spectral bandwidth at 50% I_F = 50 mA
∆λ_0.5
30
nm
Viewing angle
I_F = 50 mA
ϕ
25
deg.
Switching time
I_F = 50 mA
t_r , t_f
40
ns
Note: All measurements carried out with EPIGAP equipment
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer.
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
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