ELS-635-193 Datasheet, PDF (1/1 Pages) EPIGAP optoelectronic GmbH – SMD-LED

SMD-LED
Radiation
Red
2
0,3
R
3,2
Type
SMD
all dimensions: mm
all tolerances: ± 0,1
pad 1,15 x 1,0
cathode
ELS-635-193
16.11.2007
rev. 04
Technology
AlInGaP/AlGaAs
Case
SMD 1206
Description
High-power, high speed LED in standard
SMD package, compact design allows for
easy circuit board mounting and
assembling of arrays
Applications
Illumination, indicators, measurement
applications and security systems,
automation
Absolute Maximum Ratings
at T_amb = 25°C, unless otherwise specified
Parameter
Test сonditions
Symbol
Value
Unit
DC forward current
Peak forward current
Power dissipation
I_F
t_p ≤ 100 µs, t_p/T ≤ 0.1
I_FM
P
20
mA
50
mA
50
mW
Operating temperature range
Storage temperature range
T_amb
-20 to +85
°C
T_stg
-55 to +100
°C
Electrical and Optical Characteristics
at T_amb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Typ
Max
Unit
Forward voltage
I_F = 20 mA
V_F
2,0
2,5
V
Reverse voltage
I_F = 100 µA
V_R
5
V
Radiant power
I_F = 20 mA
Φ_e
1,1
1,4
mW
Peak wavelength
I_F = 20 mA
λ_p
625
635
645
nm
Spectral bandwidth at 50% I_F = 20 mA
∆λ_0.5
18
nm
Viewing angle
I_F = 20 mA
ϕ
120
deg.
Switching time
I_F = 20 mA
t_r , t_f
10
ns
Note: All measurements carried out with EPIGAP equipment
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer.
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
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