ELP-880-014-1 Datasheet, PDF (1/1 Pages) EPIGAP optoelectronic GmbH – LED - Lamp

LED - Lamp
Radiation
Infrared
Type
Point source (ball lens)
ELP-880-014-1
16.11.2007
rev. 04
Technology
Case
AlGaAs/GaAs
TO-18 + flat window
Description
High power, high speed infrared point source LED,
high reliability, small-size emitting aperture
0,4 Ø0,55
Cathode
Anode
13,5 ^±1,0
0,25
2,0 ^±0,1
3,3 ^±0,2
Ø5,4
Cathode
Applications
Anode
Optical communications, safety equipment,
automation, optical sensors, optical switches
Maximum Ratings
T_amb = 25°C, unless otherwise specified
Parameter
Forward current (DC)
Peak forward current
Power dissipation
Operating temperature range
Storage temperature range
Soldering temperature
Test сonditions
(t_P ≤ 50 µs, t_P /T = 1/2)
t ≤ 5 s, 3 mm from case
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Forward voltage
I_F = 50 mA
V_F
Reverse voltage
I_R = 10 µA
V_R
5
Radiant power
I_F = 50 mA
Φ_e
2,5
Radiant intensity
I_F = 50 mA
Ι_e
23
Peak wavelength
I_F = 50 mA
λ_p
865
Spectral bandwidth at 50% I_F = 50 mA
∆λ_0.5
Viewing angle
I_F = 50 mA
ϕ
Switching time
I_F = 50 mA
t_r, t_f
Symbol
Value
Unit
I_F
80
mA
I_FM
400
mA
P_D
150
mW
T_amb
-30 to +100
°C
T_stg
-40 to +125
°C
T_sd
260
°C
Typ
Max
Unit
1.8
2.3
V
V
3,5
mW
36
mW/sr
875
885
nm
35
nm
12
deg.
16
ns
Note: All measurements carried out on EPIGAP equipment
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer.
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
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