ELD-950-555 Datasheet, PDF (1/1 Pages) EPIGAP optoelectronic GmbH – LED - Lamp

LED - Lamp
Radiation
Infrared
Anode
2 _{- 1,0}
32,5
ELD-950-555
15.11.2007
rev. 04
Type
DH
Technology
AlGaAs/GaAs
Case
5 mm plastic lens
9 _{- 0,5}
1,1 _{- 0,1}
Description
High-power, high-speed infrared LED in
standard 5 mm package, wide beam angle,
housing without standoff leads
6 _{- 0,3}
Note: Special packages with standoff available on request
Applications
0,6 _-0,2 Optical communications, safety equipment,
automation, optical sensors
Maximum Ratings
T_amb = 25°C, unless otherwise specified
Parameter
Test сonditions
Symbol
Value
Unit
Forward current (DC)
Peak forward current
Power dissipation
Operating temperature range
Storage temperature range
Junction temperature
Soldering temperature
(t_P ≤ 50 µs, t_P /T = 1/2)
t ≤ 5 s, 3 mm from case
I_F
100
mA
I_FM
200
mA
P_D
150
mW
T_amb
-40 to +100
°C
T_stg
-40 to +100
°C
T_J
100
°C
T_Sd
260
°C
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Forward voltage
I_F = 20 mA
V_F
Forward voltage*
I_F = 100 mA
V_F
Reverse voltage
I_R = 100 µA
V_F
5
Radiant power
I_F = 20 mA
Φ_e
3,8
Radiant power*
I_F = 100 mA
Φ_e
20
Radiant intensity
I_F = 20 mA
Ι_e
7,5
Radiant intensity*
I_F = 100 mA
Ι_e
30
Peak wavelength
I_F = 50 mA
λ_p
930
Spectral bandwidth at 50% I_F = 50 mA
∆λ_0.5
Viewing angle
I_F = 50 mA
ϕ
Switching time
I_F = 50 mA
t_r, t_f
*measured after 30s current flow
Typ
1,17
1,3
5,5
26
10
45
950
65
45
35
Max
Unit
V
1,5
V
V
mW
mW
mW/sr
mW/sr
950
nm
nm
deg.
ns
Note: All measurements carried out on EPIGAP equipment
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer.
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
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