ELD-940-525-2 Datasheet, PDF (1/1 Pages) EPIGAP optoelectronic GmbH – LED - Lamp

LED - Lamp
Radiation
Infrared
Anode
1,0 min
25,4 min
Type
DH
8,6 ^±0,3
1 ^±0,2
Ø5,9 ^±0,2
Ø5,0 ^±0,3
ELD-940-525-2
15.11.2007
rev. 02
Technology
Case
AlGaAs/GaAs
5 mm plastic lens
Description
High-power NIR-LED, housing without standoff
leads
Note: Special packages with standoff available on request
Applications
Remote control, safety equipment, automation
Maximum Ratings
T_amb = 25°C, unless otherwise specified
Parameter
Forward current (DC)
Peak forward current
Reverse voltage
Power dissipation
Operating temperature range
Storage temperature range
Junction temperature
Test сonditions
(t_P ≤ 50 µs, t_P /T = 1/2)
I_R=10 µA
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Forward voltage
I_F = 100 mA
V_F
Radiant power
I_F = 100 mA
Φ_e
20
Radiant intensity
I_F = 100 mA
Ι_e
50
Peak wavelength
I_F = 100 mA
λ_P
920
Spectral bandwidth at 50% I_F = 100 mA
∆λ_0.5
Viewing angle
I_F = 100 mA
ϕ
Switching time
I_F = 100 mA
t_r, t_f
Note: All measurements carried out on EPIGAP equipment
Symbol
Value
Unit
I_F
100
mA
I_FM
200
mA
V_R
5
V
P_D
280
mW
T_amb
-20 to +100
°C
T_stg
-55 to +100
°C
T_J
100
°C
Typ
Max
Unit
1,4
1,6
V
30
mW
70
mW/sr
935
950
nm
50
nm
25
deg.
600
ns
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer.
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
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