ELD-910-335 Datasheet, PDF (1/3 Pages) EPIGAP optoelectronic GmbH – LED - Lamp

LED - Lamp
Radiation
Infrared
Anode
1,8 _-0,6
29 _{- 2,0}
Type
DDH
ELD-910-335
15.11.2007
rev. 03
Technology
Case
AlGaAs/AlGaAs
3 mm plastic lens
4,8 _{- 0,4}
3,7 _{- 0,2}
6,1 _{- 0,4}
3,4 _{- 0,3}
0,6 _{- 0,2}
Description
High-power, high-speed infrared LED in standard
3 mm housing, small package allows compact
design, housing without standoff leads
Note: Special packages with standoff available on request
Applications
Optical communications, optical switches, optical
sensors, medical applications, safety equipment
Maximum Ratings
T_amb = 25°C, unless otherwise specified
Parameter
Forward current (DC)
Peak forward current
Power dissipation
Operating temperature range
Storage temperature range
Soldering temperature
Test сonditions
Symbol
Value
Unit
(t_p ≤ 10 µs, T = 10ms)
t ≤ 5 s, 3 mm from case
I_F
100
mA
I_FM
200
mA
P_D
150
mW
T_amb
-20 to +85
°C
T_stg
-30 to +100
°C
T_sd
260
°C
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Typ
Max
Unit
Forward voltage
I_F = 20 mA
V_F
1.2
1.5
V
Forward voltage*
I_F = 100 mA
V_F
1.4
V
Reverse voltage
I_R = 100 µA
V_F
5
V
Radiant power
Radiant power*
Radiant intensity
I_F = 20 mA
Φ_e
5
7
I_F = 100 mA
Φ_e
30
I_F = 20 mA
Ι_e
8.5
12
mW
mW
mW/sr
Radiant intensity*
I_F = 100 mA
Ι_e
50
mW/sr
Peak wavelength
I_F = 20 mA
λ_p
900
910
925
nm
Spectral bandwidth at 50% I_F = 20 mA
∆λ_0.5
70
nm
Viewing angle
I_F = 20 mA
ϕ
25
deg.
Switching time
I_F = 20 mA
t_r, t_f
400
ns
*measured after 30s current flow
Note: All measurements carried out on EPIGAP equipment
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer.
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
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