ELD-905-545 Datasheet, PDF (1/1 Pages) EPIGAP optoelectronic GmbH – LED - Lamp

LED - Lamp
Radiation
Infrared
Anode
2
16,5 _{- 2,0}
Type
DDH
7,1 - 0,6
1,1 _{- 0,1}
6,2 _{- 0,5}
10,6 - 0,6
0,7 _{- 0,4}
ELD-905-545
15.11.2007
rev. 04
Technology
Case
AlGaAs/AlGaAs
5 mm plastic lens
Description
High-power, high-speed LED in the infrared
range. Mounted in standard 5 mm housing with
standoff leads
Note: Special packages without standoff available on request
Applications
Optical communications, safety equipment,
automation, optical sensors, medical appliances
Maximum Ratings
T_amb = 25°C, unless otherwise specified
Parameter
Test сonditions
Forward current (DC)
Peak forward current
Power dissipation
Operating temperature range
Storage temperature range
Junction temperature
Soldering temperature
(t_P ≤ 50 µs, t_P /T = 1/2)
t ≤ 5 s, 3 mm from case
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Forward voltage
I_F = 20 mA
V_F
Forward voltage*
I_F = 100 mA
V_F
Reverse voltage
I_R = 100 µA
V_F
5
Radiant power
I_F = 20 mA
Φ_e
5.5
Radiant power*
I_F = 100 mA
Φ_e
Radiant intensity
I_F = 20 mA
Ι_e
15
Radiant intensity*
I_F = 100 mA
Ι_e
Peak wavelength
I_F = 100 mA
λ_p
895
Spectral bandwidth at 50% I_F = 100 mA
∆λ_0.5
Viewing angle
I_F = 100 mA
ϕ
Switching time
I_F = 100 mA
t_r, t_f
*measured after 30s current flow
Note: All measurements carried out on EPIGAP equipment
Symbol
Value
Unit
I_F
100
mA
I_FM
200
mA
P_D
190
mW
T_amb
-20 to +80
°C
T_stg
-40 to +100
°C
T_J
100
°C
T_Sd
260
°C
Typ
Max
Unit
1.3
1.5
V
1.45
1.9
V
V
8.0
mW
38
mW
21
mW/sr
100
mW/sr
905
915
nm
55
nm
40
deg.
70
ns
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer.
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
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