English
Language : 

ELD-870-395 Datasheet, PDF (1/3 Pages) EPIGAP optoelectronic GmbH – LED - Lamp
LED - Lamp
Radiation
Infrared
Type
DDH
1 max
33,0
29,5 ± 1,0
1,5
2,0
+ 0,1
-0
3,5
3,75
1,0
ELD-870-395
15.11.2007
rev. 03
Technology
Case
AlGaAs/AlGaAs
3 mm flat top
Description
High-power, high-speed LED in compact 3 mm
standard package without lens, housing with
standoff leads
Note: Special packages without standoff available on request
Applications
Optical communications, safety equipment,
automation
Maximum Ratings
Tamb = 25°C, unless otherwise specified
Parameter
Forward current (DC)
Peak forward current
Reverse voltage
Power dissipation
Operating temperature range
Storage temperature range
Junction temperature
Lead soldering temperature
Test сonditions
Symbol
Value
Unit
(tP ≤ 50 µs, tP /T = 1/2)
IR=10 µA
< 5s, 1.6 mm from case
IF
100
mA
IFM
200
mA
VR
5
V
PD
160
mW
Tamb
-25 to +100
°C
Tstg
-55 to +100
°C
TJ
100
°C
Tsol
260
°C
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Forward voltage
IF = 20 mA
VF
Forward voltage
IF = 100 mA
VF
Radiant power
IF = 20 mA
Φe
8,5
Radiant power1
IF = 100 mA
Φe
Radiant intensity
IF = 20 mA
Ιe
3
Radiant intensity1
IF = 100 mA
Ιe
Peak wavelength
IF = 20 mA
λp
860
Spectral bandwidth at 50% IF = 20 mA
∆λ0.5
Viewing angle
IF = 20 mA
ϕ
Switching time
1for information only
IF = 20 mA
tr, tf
Typ
1,4
1,7
12
55
4
19
870
45
100
10/20
Max
Unit
1,6
V
V
mW
mW
mW/sr
mW/sr
880
nm
nm
deg.
ns
Note: All measurements carried out on EPIGAP equipment
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer.
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
1 of 3