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ELD-810-335 Datasheet, PDF (1/3 Pages) EPIGAP optoelectronic GmbH – LED - Lamp
LED - Lamp
Radiation
Infrared
Type
DDH
Ø3,1
4,3
30,0 ±1,0
1,5
1,0 0,65
4,0
1,0
Anode
ELD-810-335
15.11.2007
rev. 04
Technology
Case
AlGaAs/AlGaAs
3 mm plastic lens
Description
High-power, high-speed infrared LED in standard
3 mm housing, small package allows compact
design, housing with standoff leads
Note: Special packages without standoff available on request
Applications
Optical communications, safety equipment,
automation, optical sensors
Maximum Ratings
Tamb = 25°C, unless otherwise specified
Parameter
Forward current (DC)
Peak forward current
Power dissipation
Operating temperature range
Storage temperature range
Junction temperature
Test сonditions
(tP ≤ 50 µs, tP /T = 1/2)
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Forward voltage
IF = 20 mA
VF
Forward voltage*
IF = 50 mA
VF
Reverse voltage
IR = 10 µA
VF
5
Radiant power
IF = 20 mA
Φe
4
Radiant power*
IF = 50 mA
Φe
Radiant intensity
IF = 20 mA
Ιe
4.5
Radiant intensity*
IF = 50 mA
Ιe
14
Peak wavelength
IF = 20 mA
λp
800
Spectral bandwidth at 50% IF = 20 mA
∆λ0.5
Viewing angle
IF = 20 mA
ϕ
Switching time
IF = 20 mA
tr, tf
*measured after 30s current flow
Note: All measurements carried out on EPIGAP equipment
Symbol
Value
Unit
IF
60
mA
IFM
150
mA
PD
120
mW
Tamb
-20 to +85
°C
Tstg
-30 to +100
°C
TJ
100
°C
Typ
Max
Unit
1.6
1.9
V
1.7
V
V
6
mW
18
mW
6.5
mW/sr
20
mW/sr
810
820
nm
30
nm
40
deg.
40
ns
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer.
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
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