ELD-810-095-3 Datasheet, PDF (1/1 Pages) EPIGAP optoelectronic GmbH – LED - Lamp

LED - Lamp
Radiation
Infrared
ELD-810-095-3
16.11.2007
rev. 03
Type
Technology
Case
DDH
AlGaAs/AlGaAs
TO-46
0,60 ± 0,15
Anode
Cathode
40,0 ± 1,0
0,28
1,2
2,8 ± 0,15
Description
Ø 5,40 ± 0,1
Ø 4,0 ± 0,1
High-power, high-speed infrared LED in
hermetically sealed TO-46 package, mounted on
reflector header for beam forming
Note: Special packages with standoff available on request
TO-46C + TL CAN
Applications
Chip Location _{Optical communications, safety equipment,}
automation, optical sensors, encoders
Maximum Ratings
T_amb = 25°C, unless otherwise specified
Parameter
Forward current (DC)
Peak forward current
Power dissipation
Operating temperature range
Storage temperature range
Junction temperature
Test сonditions
Symbol
Value
Unit
(t_P ≤ 50 µs, t_P /T = 1/2)
I_F
100
mA
I_FM
200
mA
P_D
220
mW
T_amb
-40 to +100
°C
T_stg
-55 to +100
°C
T_J
100
°C
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Typ
Max
Unit
Forward voltage
I_F = 20 mA
V_F
1.6
1.9
V
Forward voltage*
I_F = 100 mA
V_F
1.7
V
Reverse voltage
I_R = 10 µA
V_F
5
V
Radiant power
I_F = 20 mA
Φ_e
1.5
2.5
mW
Radiant power*
I_F = 100 mA
Φ_e
10
mW
Radiant intensity
I_F = 20 mA
Ι_e
1.5
2
mW/sr
Radiant intensity*
I_F = 100 mA
Ι_e
8
mW/sr
Peak wavelength
I_F = 100 mA
λ_p
800
810
820
nm
Spectral bandwidth at 50% I_F = 100 mA
∆λ_0.5
35
nm
Viewing angle
I_F = 100 mA
ϕ
90
deg.
Switching time
I_F = 100 mA
t_r, t_f
40
ns
*measured after 30s current flow
Note: All measurements carried out on EPIGAP equipment
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer.
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
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