ELD-770-344 Datasheet, PDF (1/3 Pages) EPIGAP optoelectronic GmbH – LED - Lamp

LED - Lamp
Radiation
Infrared
Type
DDH
Ø3,1
4,3
30,0 ^±1,0
1,5
1,0 0,65
4,0
1,0
Anode
ELD-770-344
15.11.2007
rev. 05
Technology
Case
AlGaAs/AlGaAs
3 mm plastic lens
Description
High-power, high-speed infrared LED in standard
3 mm housing, small package allows compact
design, housing with standoff leads
Note: Special packages without standoff available on request
Applications
Optical communications, safety equipment,
automation, optical sensors
Maximum Ratings
T_amb = 25°C, unless otherwise specified
Parameter
Test сonditions
Symbol
Value
Unit
Forward current (DC)
Peak forward current
Power dissipation
Operating temperature range
Storage temperature range
Junction temperature
Soldering temperature
(t_P ≤ 10 µs, T > 10 ms)
t ≤ 5 s, 3 mm from case
I_F
50
mA
I_FM
500
mA
P_D
120
mW
T_amb
-20 to +85
°C
T_stg
-30 to +100
°C
T_j
100
°C
T_sd
260
°C
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Typ
Max
Unit
Forward voltage
I_F = 20 mA
V_F
1.6
1.9
V
Forward voltage*
I_F = 50 mA
V_F
1.9
V
Reverse voltage
I_R = 100 µA
V_F
5
V
Radiant power
I_F = 20 mA
Φ_e
8
11
mW
Radiant power*
I_F = 50 mA
Φ_e
25
mW
Radiant intensity
I_F = 20 mA
Ι_e
5
7
mW/sr
Radiant intensity*
I_F = 50 mA
Ι_e
16
mW/sr
Peak wavelength
I_F = 20 mA
λ_p
760
770
780
nm
Spectral bandwidth at 50% I_F = 20 mA
∆λ_0.5
25
nm
Viewing angle
I_F = 20 mA
ϕ
40
deg.
Switching time
I_F = 20 mA
t_r, t_f
50/40
ns
*measured after 30s current flow
Note: All measurements carried out on EPIGAP equipment
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer.
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
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