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ELD-760-324 Datasheet, PDF (1/1 Pages) EPIGAP optoelectronic GmbH – LED - Lamp
LED - Lamp
Radiation
Infrared
30,0 ±1,0
4,3
Anode
1,5
0,65 1,0
Type
DDH
Ø3
ELD-760-324
15.11.2007
rev. 02
Technology
AlGaAs/AlGaAs
Case
3 mm plastic lens
Description
High-power, high-speed infrared LED with lens,
standard 3 mm package allows compact design,
housing without standoff leads
Note: Special packages with standoff available on request
Applications
Optical communications, safety equipment,
automation
Maximum Ratings
Tamb = 25°C, unless otherwise specified
Parameter
Test сonditions
Symbol
Value
Unit
Forward current (DC)
Peak forward current
Power dissipation
Operating temperature range
Storage temperature range
Junction temperature
Lead soldering temperature
(tP ≤ 50 µs, tP /T = 1/2)
< 5s, 3.0 mm from case
IF
50
mA
IFM
100
mA
PD
120
mW
Tamb
-20 to +85
°C
Tstg
-55 to +100
°C
TJ
100
°C
Tsol
260
°C
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Typ
Max
Unit
Forward voltage
IF = 20 mA
VF
1.7
2.0
V
Forward voltage1
IF = 50 mA
VF
2.0
V
Reverse voltage
IR = 100 µA
VR
5
V
Radiant power
IF = 20 mA
Φe
4
6
mW
Radiant power1
IF = 50 mA
Φe
14
mW
Radiant intensity
IF = 20 mA
Ιe
24
30
mW/sr
Radiant intensity1
IF = 50 mA
Ιe
70
mW/sr
Peak wavelength
IF = 20 mA
λp
750
760
775
nm
Spectral bandwidth at 50% IF = 20 mA
∆λ0.5
30
nm
Viewing angle
IF = 20 mA
ϕ
20
deg.
Switching time
IF = 20 mA
tr, tf
35
ns
1for information only
Note: All measurements carried out on EPIGAP equipment
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer.
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
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