ELD-720-524-1 Datasheet, PDF (1/1 Pages) EPIGAP optoelectronic GmbH – LED - Lamp

LED - Lamp
Radiation
Infrared
Anode
1,5
9,15
1
36,5 ^{± 1,0}
Type
DDH
5,75 _{- 0,3}
0,6 _{- 0,2}
Ø5
ELD-720-524-1
13.11.2007
rev. 03
Technology
AlGaAs/AlGaAs
Case
5 mm plastic lens
Description
High-power, high-speed, double heterostructure
with removed substrate, chip with central contact,
housing without standoff leads
Note: Special packages without standoff available on request
Applications
Optical communications, safety equipment,
automation
Maximum Ratings
T_amb = 25°C, unless otherwise specified
Parameter
Forward current (DC)
Peak forward current
Operating temperature range
Storage temperature range
Test сonditions
(t_P ≤ 50 µs, t_P /T = 1/2)
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Forward voltage¹
I_F = 50 mA
V_F
Reverse voltage
I_R = 100 µA
V_R
5V
Radiant power¹
I_F = 50 mA
Φ_e
8
Radiant intensity¹
I_F = 50 mA
Ι_e
40
Peak wavelength
I_F = 20 mA
λ_p
710
Spectral bandwidth at 50% I_F = 20 mA
∆λ_0.5
Viewing angle
I_F =50 mA
2ϕ
Switching time
1_{for information only}
I_F = 50 mA
t_r, t_f
Note: All measurements carried out on EPIGAP equipment
Symbol
Value
Unit
I_F
50
mA
I_FM
100
mA
T_amb
-40 to +85
°C
T_stg
-55 to +100
°C
Typ
Max
Unit
2.0
2.4
V
V
10
mW
70
mW/sr
720
730
nm
30
nm
20
deg.
40
ns
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer.
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
1 of 1