ELC-980-28-1 Datasheet, PDF (1/1 Pages) EPIGAP optoelectronic GmbH – LED - Chip

LED - Chip
discontinued
Radiation
Infrared
Type
MQW
ELC-980-28-1
10.04.2007
rev. 03/06
Technology
InGaAs/GaAs
Electrodes
N (cathode) up
460
typ. dimensions (µm)
360
300
typ. thickness
260 (±20) µm
cathode
gold alloy, 1.5 µm
anode
gold alloy, 0.5 µm,
solder able
PD-02
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Typ
Forward voltage
I_F = 100 mA
V_F
1.2
Reverse voltage
I_R = 10 µA
V_R
5
Radiant power¹
I_F = 100 mA
Φ_e
0.5
1.0
Radiant power²
I_F = 100 mA
Φ_e
2.0
Peak wavelength
I_F = 100 mA
λ_p
970
980
Spectral bandwidth at 50% I_F = 100 mA
∆λ_0.5
80
Switching time
I_F = 100 mA
t_r, t_f
10
1_{Measured on bare chip on TO-18 header with EPIGAP equipment}
2_{Measured on epoxy covered chip on TO-18 header with EPIGAP equipment}
Labeling
Type
ELС-980-28-1
Lot N°
Φ_e(typ) [mW] V_F(typ) [V]
Packing: Chips on adhesive film with wire-bond side on top
Max
Unit
1.5
V
V
mW
mW
1000
nm
nm
ns
Quantity
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
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