ELC-940-17-70 Datasheet, PDF (1/1 Pages) EPIGAP optoelectronic GmbH – LED - Chip

LED - Chip
Radiation
Infrared
Type
Point Source
Ø250
+10
-5
emitting
area
PS-09
bonding
area
Ø100
ELC-940-17-70
25.02.2008
rev. 06
Technology
AlGaAs/GaAs
Electrodes
P (anode) up
typ. dimensions (µm)
typ. thickness
260 (±20) µm
cathode
gold alloy, 0.5 µm
anode
gold alloy, 1.5 µm
Maximum Ratings
T_amb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Typ
Forward current (DC)
I_F
Peak forward current
t_P≤50 µs,
t_P/T = 1/2
I_FM
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Typ
Forward voltage
I_F = 100 mA
V_F
1.4
Reverse voltage
I_R = 100 µA
V_R
5
Radiant power*
I_F = 100 mA
Φ_e
0.5
0,8
Peak wavelength
I_F = 100 mA
λ_p
930
940
Spectral bandwidth at 50% I_F = 100 mA
∆λ_0.5
50
Switching time
I_F = 100 mA
t_r, t_f
600
*Measured on bare chip on TO-18 header with EPIGAP equipment
Labeling
Type
ELС-940-17-70
Lot N°
Φ_e(typ) [mW] V_F(typ) [V]
Packing: Chips on adhesive film with wire-bond side on top
Max
Unit
100
mA
120
mA
Max
Unit
1.6
V
V
mW
950
nm
nm
ns
Quantity
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer.
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
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