ELC-910-11 Datasheet, PDF (1/1 Pages) EPIGAP optoelectronic GmbH – LED - Chip

LED - Chip
Preliminary
Radiation
Infrared
1000
Type
DDH
10.04.2007
Technology
AlGaAs/AlGaAs
ELС-910-11
rev. 01/06
Electrodes
P (anode) up
typ. dimensions (µm)
typ. thickness
150 (±25) µm
cathode
gold alloy, 0.5 µm
anode
gold alloy, 1.5 µm
PoC-05
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Forward voltage
I_F = 20 mA
V_F
Typ
Max
1.15
Forward voltage²
I_F = 350 mA
V_F
1.35
Reverse voltage
I_R = 10 µA
V_R
5
Radiant power¹
I_F = 20 mA
Φ_e
1.5
Radiant power²
I_F = 350 mA
Φ_e
22.5
Radiant intensity¹
I_F = 20 mA
Ι_e
0.45
Radiant intensity²
I_F = 350 mA
Ι_e
7.3
Peak wavelength
I_F = 20 mA
λ_P
900
910
920
Spectral bandwidth at 50% I_F = 20 mA
∆λ_0.5
60
Switching time
I_F = 20 mA
t_r, t_f
20
1_{Measured on bare chip on TO-18 header}
2_{Measured on bare chip glued on a Ø 8 x 1mm Cu header (10 s after switched on) (for information only)}
Unit
V
V
V
mW
mW
mW/sr
mW/sr
nm
nm
ns
Labeling
Type
ELС-910-11
Lot N°
Φ_e(typ) [mW] V_F(typ) [V]
Packing: Chips on adhesive film with wire-bond side on top
*Note: All measurements carried out on EPIGAP equipment
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
Quantity
1 of 1