ELC-875-21 Datasheet, PDF (1/1 Pages) EPIGAP optoelectronic GmbH – LED - Chip

LED - Chip
discontinued
Radiation
Infrared
1000
Type
DDH
6/21/2007
Technology
AlGaAs/AlGaAs
ELC-875-21
rev. 04/07
Electrodes
N (cathode) up
typ. dimensions (µm)
typ. thickness
180 µm
anode
gold alloy, 1.5 µm
cathode
gold alloy, 0.5 µm
dotted, 25% covered
PoC-05
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Forward voltage
I_F = 20 mA
V_F
Typ
Max
Unit
1.3
1.8
V
Forward voltage
I_F = 300 mA
V_F
1.66
2.1
V
Reverse voltage
I_R = 100 µA
V_R
5
V
Radiant power¹
I_F = 20 mA
Φ_e
2.0
3.0
mW
Radiant power²
I_F = 300 mA
Φ_e
49
mW
Radiant power³
I_F = 300 mA
Φ_e
95
mW
Peak wavelength
I_F = 300 mA
λ_p
860
875
890
nm
Spectral bandwidth at 50% I_F = 300 mA
∆λ_0.5
45
nm
Switching time
I_F = 300 mA
t_r, t_f
25
ns
1_{Measured on bare chip on TO-18 header}
2_{Measured on bare chip on TO-18 header and heat sink, 10s current flow}
3_{Measured on epoxy chip on TO-18 header and heat sink, 10s current flow (information only)}
Labeling
Type
ELС-875-21
Lot N°
Φ_e(typ) [mW] V_F(typ) [V]
Quantity
Packing: Chips on adhesive film with wire-bond side on top
Note: All measurements carried out with EPIGAP equipment
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
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