ELC-875-19-50 Datasheet, PDF (1/1 Pages) EPIGAP optoelectronic GmbH – LED - Chip

LED - Chip
Radiation
Infrared
180
Ø150
570
Type
Point Source
PS-10
ELC-875-19-50
14.11.2007
rev. 05
Technology
Electrodes
AlGaAs/GaAs
P (anode) up
typ. dimensions (µm)
typ. thickness
260 (±20) µm
cathode
gold alloy, 0.5 µm
anode
gold alloy, 1.5 µm
Maximum Ratings
T_amb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Forward current (DC)
I_F
Peak forward current
t_P≤50 µs,
t_P/T = 1/2
I_FM
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Forward voltage
I_F = 20 mA
V_F
Forward voltage
I_F = 100 mA
V_F
Reverse voltage
I_R = 10 µA
V_R
5
Radiant power*
I_F = 20 mA
Φ_e
0.6
Radiant power*
I_F = 100 mA
Φ_e
4.0
Peak wavelength
I_F = 20 mA
λ_p
865
Spectral bandwidth at 50% I_F = 20 mA
∆λ_0.5
Switching time
I_F = 20 mA
t_r, t_f
*Measured on bare chip on TO-18 header with EPIGAP equipment
Typ
Max
Unit
100
mA
200
mA
Typ
Max
Unit
1.3
1.5
V
1.5
1.9
V
V
0.8
mW
5.5
mW
875
885
nm
40
nm
16
ns
Labeling
Type
ELС-875-19-50
Lot N°
Φ_e(typ) [mW] V_F(typ) [V]
Packing: Chips on adhesive film with wire-bond side on top
Quantity
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer.
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
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