ELC-875-19-20 Datasheet, PDF (1/1 Pages) EPIGAP optoelectronic GmbH – LED - Chip

LED - Chip
Radiation
Infrared
Type
Point Source
360
310
Ø50
+7
-2
PS-11
25.02.2008
Technology
AlGaAs/GaAs
ELC-875-19-20
rev. 08
Electrodes
P (anode) up
typ. dimensions (µm)
typ. thickness
300 (± 20) µm
anode
gold alloy, 1.5 µm
cathode
gold alloy, 0.5 µm
Maximum Ratings
T_amb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Forward current (DC)
I_F
Peak forward current
t_P ≤ 50 µs, t_P/T
= 1/2
I_FM
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Forward voltage
I_F = 20 mA
V_F
Forward voltage
I_F = 50 mA
V_F
Reverse voltage
I_R = 10 µA
V_R
5
Radiant power*
I_F = 20 mA
Φ_e
0.4
Radiant power*
I_F = 50 mA
Φ_e
Peak wavelength
I_F = 20 mA
λ_p
865
Spectral bandwidth at 50% I_F = 20 mA
∆λ_0.5
Switching time
I_F = 20 mA
t_r, t_f
*Measured on bare chip on TO-18 header with EPIGAP equipment
Labeling
Type
Lot N°
Φ_e(typ) [mW]
ELС-875-19-20
Packing: Chips on adhesive film with wire-bond side on top
Typ
Typ
1.4
1.5
0.6
1.9
875
40
16
V_F(typ) [V]
Max
Unit
50
mA
100
mA
Max
Unit
1.8
V
V
V
mW
mW
885
nm
nm
ns
Quantity
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer.
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
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