ELC-870-27 Datasheet, PDF (1/1 Pages) EPIGAP optoelectronic GmbH – LED - CHIP

LED - CHIP
ELC-870-27
Radiation
Infrared
Type
DDH
Outline (dimensions in microns)
Technology
AlGaAs/AlGaAs
Electrodes
N (cathode) up
n-side electrode, gold alloy
epitaxial n-AlGaAs
active layer
epitaxial p-AlGaAs
p-side electrode, gold alloy
360
ELC-07
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Typ
Forward voltage
I_F = 20 mA
V_F
1.4
Reverse voltage
I_R = 100 µA
V_R
5
Radiant power*
I_F = 20 mA
Φ_e
3.5
4.5
Peak wavelength
I_F = 20 mA
λ_p
860 875
Spectral bandwidth at 50% I_F = 20 mA ∆λ_0.5
45
Switching time
I_F = 20 mA
t_r, t_f
25
*Measured on bare chip on TO-18 header
Labeling
Type
ELC-870-27
Lot N°
Φ_e (min, typ), V_F (typ, max)
Packing
Chips on adhesive film with wire-bond side on top
Max
Unit
1.7
V
V
mW
890
nm
nm
ns
Quantity
rev.09/02
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str. 325 b, Hs. 201, Tel.: [phone], Fax.: [phone]