ELC-870-21 Datasheet, PDF (1/1 Pages) EPIGAP optoelectronic GmbH – LED - Chip

LED - Chip
Radiation
Infrared
1000
PoC-05
Type
DDH
02.04.2008
Technology
AlGaAs/AlGaAs
typ. dimensions (µm)
ELС-870-21
rev. 01
Electrodes
N (cathode) up
typ. thickness
160 (±25) µm
cathode
gold alloy, 1.5 µm
anode
gold alloy, 0.5 µm
structured, 25% covered
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Typ
Forward voltage
I_F = 20 mA
V_F
1.3
Forward voltage¹
I_F = 350 mA
V_F
1.5
Reverse voltage
Radiant power
I_R = 100 µA
V_R
5
I_F = 20 mA
Φ_e
3.5
5
Radiant power¹
I_F = 350 mA
Φ_e
70
90
Peak wavelength
I_F = 20 mA
λ_P
860
870
Spectral bandwidth at 50%
I_F = 20 mA
∆λ_0.5
35
Switching time
I_F = 20 mA
t_r, t_f
20
1_{Measured on bare chip glued on a Ø 8 x 1mm Cu header with EPIGAP equipment}
Max
Unit
1.5
V
1.8
V
V
mW
mW
880
nm
nm
ns
Labeling
Type
ELС-870-21
Lot
Φ_e(typ) [mW] V_F(typ) [V] λ_P(typ) [nm]
Packing: Chips on adhesive film with wire-bond side on top
Quantity
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each application by the customer themselves.
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
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