ELC-870-12 Datasheet, PDF (1/1 Pages) EPIGAP optoelectronic GmbH – LED - Chip

LED - Chip
Preliminary
Radiation
Infrared
Type
DDH
650
Ø110
480
25
LED-07
10.04.2007
Technology
AlGaAs/AlGaAs
ELC-870-12
rev. 02/07
Electrodes
P (anode) up
typ. dimensions (µm)
typ. thickness
160 (+70/-30) µm
anode
gold alloy, 1.5 µm
cathode
gold alloy, 0.5 µm
dotted, 25% covered
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Forward voltage
I_F = 20 mA
V_F
Typ
Max
1.3
1.6
Forward voltage³
I_F = 300 mA
V_F
1.6
Reverse voltage
I_R = 100 µA
V_R
5
Radiant power¹
I_F = 20 mA
Φ_e
2.8
3.7
Radiant power²
I_F = 20 mA
Φ_e
7.0
Radiant power³
I_F = 300 mA
Φ_e
50
Radiant intensity¹
I_F = 20 mA
Ι_e
0.75
1.0
Radiant intensity³
I_F = 300 mA
Ι_e
13.5
Peak wavelength
I_F = 20 mA
λ_p
860
870
880
Spectral bandwidth at 50% I_F = 20 mA
∆λ_0.5
45
Switching time
I_F = 20 mA
t_r, t_f
10/25
1_{Measured on bare chip on TO-18 header}
2_{Measured on epoxy covered chip on TO-18 header}
3_{Measured on bare chip on TO-18 header and heat sink, 10s current flow (information only)}
Unit
V
V
V
mW
mW
mW
mW/sr
mW/sr
nm
nm
ns
Labeling
Type
ELС-870-12
Lot N°
Φ_e(typ) [mW]
Packing: Chips on adhesive film with wire-bond side on top
Note: All measurements carried out with EPIGAP equipment
V_F(typ) [V]
Quantity
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
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