ELC-870-11 Datasheet, PDF (1/1 Pages) EPIGAP optoelectronic GmbH – LED - Chip

LED - Chip
Preliminary
Radiation
Infrared
1000
Type
DDH
PoC-05
6/21/2007
Technology
AlGaAs/AlGaAs
typ. dimensions (µm)
ELС-870-11
rev. 06/07
Electrodes
P (anode) up
typ. thickness
160 (±20) µm
anode
gold alloy, 1.5 µm
cathode
gold alloy, 0.5 µm
dotted, 25% covered
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Forward voltage
I_F = 20 mA
V_F
Typ
Max
Unit
1.3
1.5
V
Forward voltage²
I_F = 350 mA
V_F
1.7
1.9
V
Reverse voltage
I_R = 10 µA
V_R
5
V
Radiant power¹
I_F = 20 mA
Φ_e
3
4
mW
Radiant power²
I_F = 350 mA
Φ_e
62
mW
Radiant power³
I_F = 350 mA
Φ_e
120
mW
Radiant power²
I_F = 700 mA
Φ_e
200
mW
Peak wavelength
I_F = 20 mA
λ_P
860
870
880
nm
Spectral bandwidth at 50% I_F = 20 mA
∆λ_0.5
45
nm
Switching time
I_F = 20 mA
t_r, t_f
10/25
ns
1_{Measured on bare chip on TO-18 header with EPIGAP equipment}
2_{Measured on bare chip glued on a Ø 8 x 1mm Cu header (10 s after switched on)}
3_{Measured on epoxy covered chip glued on a Ø 8 x 1mm Cu header (10 s after switched on) with}
EPIGAP equipment (for information only)
Labeling
Type
ELС-870-11
Lot N°
Φ_e(typ) [mW] V_F(typ) [V]
Packing: Chips on adhesive film with wire-bond side on top
Quantity
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
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