ELC-770-27 Datasheet, PDF (1/1 Pages) EPIGAP optoelectronic GmbH – LED - Chip

LED - Chip
Preliminary
Radiation
Infrared
Type
DDH
ELС-770-27
10.04.2007
rev. 03/06
Technology
AlGaAs/AlGaAs
Electrodes
N (cathode) up
360
typ. dimensions (µm)
120
typ. thickness
150 (±25) µm
cathode
gold alloy, 1.5 µm
anode
gold alloy, 0.5 µm,
dotted, 25% covered
LED-05
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Typ
Forward voltage
I_F = 20 mA
V_F
1.7
Reverse voltage
I_R = 100 µA
V_R
5
Radiant power¹
I_F = 20 mA
Φ_e
2.0
2.7
Radiant power²
I_F = 20 mA
Φ_e
5.0
Peak wavelength
I_F = 20 mA
λ_p
760
770
Spectral bandwidth at 50% I_F = 20 mA
∆λ_0.5
30
Switching time
I_F = 20 mA
t_r, t_f
40
1_{Measured on bare chip on TO-18 header with EPIGAP equipment}
2_{Measured on epoxy covered chip on TO-18 header with EPIGAP equipment}
Labeling
Type
ELС-770-27
Lot N°
Φ_e(typ) [mW] V_F(typ) [V]
Packing: Chips on adhesive film with wire-bond side on top
Max
Unit
2.1
V
V
mW
mW
780
nm
nm
ns
Quantity
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
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