ELC-740-29-40 Datasheet, PDF (1/1 Pages) EPIGAP optoelectronic GmbH – LED - Chip

LED - Chip
Radiation
Infrared
Type
Point Source
Ø100
+7
-3
ELC-740-29-40
25.02.2008
rev. 03
Technology
Electrodes
AlGaAs/AlGaAs
N (cathode) up
typ. dimensions (µm)
R
30
245
450
+ 20
-10
R
155
180
typ. thickness
150 (±25) µm
cathode
gold alloy, 1.5 µm
anode
gold alloy, 0.5 µm
PS-14
Maximum Ratings
T_amb = 25°C, unless otherwise specified
Parameter
Test
conditions
Forward current (DC)
Peak forward current
t_P ≤ 50 µs,
t_P/T = 1/2
Symbol
I_F
I_FM
Min
Typ
Max
Unit
75
mA
150
mA
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Forward voltage
I_F = 20 mA
V_F
Forward voltage²
I_F = 50 mA
V_F
Reverse voltage
I_R = 100 µA
V_R
5
Radiant power¹
I_F = 20 mA
Φ_e
0.8
Radiant power^1,2
I_F = 50 mA
Φ_e
Peak wavelength
I_F = 20 mA
λ_P
730
Spectral bandwidth at 50% I_F = 20 mA
∆λ_0.5
Switching time
I_F = 20 mA
t_r, t_f
1) _{Measured on bare chip on TO-18 header with EPIGAP equipment}
2 )_{for information only}
Typ
1.75
1.9
1.2
2.8
740
30
40
Labeling
Type
ELC-740-29-40
Lot N°
Φ_e(typ) [mW] V_F(typ) [V]
Max
Unit
2.2
V
V
V
mW
mW
750
nm
nm
ns
Quantity
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer.
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
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