ELC-740-27-70 Datasheet, PDF (1/1 Pages) EPIGAP optoelectronic GmbH – LED - Chip

LED - Chip
Radiation
Infrared
Type
Point Source
Ø250
+10
-5
emitting
area
PS-09
bonding
area
Ø100
ELC-740-27-70
25.02.2008
rev. 05
Technology
AlGaAs/GaAs
Electrodes
N (cathode) up
typ. dimensions (µm)
typ. thickness
260 (±20) µm
cathode
gold alloy, 1.5 µm
anode
gold alloy, 0.5 µm
Maximum Ratings
T_amb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Forward current (DC)
I_F
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Forward voltage
I_F = 20 mA
V_F
Reverse voltage
I_R = 10 µA
V_R
5
Radiant power*
I_F = 20 mA
Φ_e
0.3
Peak wavelength
I_F = 20 mA
λ_P
730
Spectral bandwidth at 50% I_F = 20 mA
∆λ_0.5
Switching time
I_F = 20 mA
t_r, t_f
*Measured on bare chip on TO-18 header with EPIGAP equipment
Typ
Max
Unit
50
mA
Typ
Max
Unit
1.7
1.9
V
V
0.6
mW
740
750
nm
45
nm
50
ns
Labeling
Type
ELC-740-27-70
Lot N°
Φ_e(typ) [mW] V_F(typ) [V]
Quantity
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer.
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
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