ELC-740-21 Datasheet, PDF (1/1 Pages) EPIGAP optoelectronic GmbH – LED - Chip

LED - Chip
Preliminary
Radiation
Infrared
1000
Type
DDH
ELС-740-21
10.04.2007
rev. 01/06
Technology
AlGaAs/AlGaAs
Electrodes
N (cathode) up
typ. dimensions (µm)
typ. thickness
150 (±25) µm
cathode
gold alloy, 1.5 µm
anode
gold alloy, 0.5 µm
dotted, 25% covered
PoC-05
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Forward voltage
I_F = 20 mA
V_F
Typ
Max
Unit
1.7
1.9
V
Forward voltage²
I_F = 300 mA
V_F
2.0
V
Reverse voltage
I_R = 10 µA
V_R
5
V
Radiant power¹
I_F = 300 mA
Φ_e
9.5
12
mW
Radiant power²
I_F = 300 mA
Φ_e
24
mW
Peak wavelength¹
I_F = 20 mA
λ_P
730
740
750
nm
Spectral bandwidth at 50% I_F = 20 mA
∆λ_0.5
35
nm
Switching time
I_F = 20 mA
t_r, t_f
50
ns
1_{Measured on bare chip on TO-18 header}
2_{Measured on epoxy covered chip on TO-18 header in copper heat sink (for information only)}
Note: All measurements carried out with EPIGAP equipment
Labeling
Type
ELС-740-21
Lot N°
Φ_e(typ) [mW] V_F(typ) [V]
Quantity
Packing: Chips on adhesive film with wire-bond side on top
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
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