ELC-685-21-15 Datasheet, PDF (1/1 Pages) EPIGAP optoelectronic GmbH – LED - Chip

LED - Chip
Preliminary
Radiation
Deep red
1000
Type
solderable
ELС-685-21-15
10.04.2007
rev. 01/07
Technology
AlGaAs/GaAs
Electrodes
N (cathode) up
typ. dimensions (µm)
typ. thickness
260 (±20) µm
cathode
gold alloy, 1.5 µm
anode
gold alloy, 0.5 µm
PoC-05
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Forward voltage
I_F = 20 mA
V_F
Forward voltage
I_F = 300 mA
V_F
Reverse voltage
I_R = 100 µA
V_R
5
Radiant power
I_F = 20 mA
Φ_e
0.75
Radiant power¹
I_F = 300 mA
Φ_e
18
Peak wavelength
I_F = 300 mA
λ_p
685
Spectral bandwidth at 50% I_F = 300 mA
∆λ_0.5
Switching time
I_F = 100 mA
t_r, t_f
1_{Measured on bare chip on TO-18 header with EPIGAP equipment}
Typ
1.7
2.0
1.0
24
700
40
40/30
Labeling
Type
ELС-685-21-15
Lot N°
Φ_e(typ) [mW] V_F(typ) [V]
Packing: Chips on adhesive film with wire-bond side on top
Max
Unit
2.0
V
2.4
V
V
mW
mW
710
nm
nm
ns
Quantity
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
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