ELC-685-21-05 Datasheet, PDF (1/1 Pages) EPIGAP optoelectronic GmbH – LED - Chip

LED - Chip
discontinued
Radiation
Deep red
Type
solderable
1000
340
Ø110
PoC-02
ELС-685-21-05
23.05.2007
rev. 04/07
Technology
Electrodes
AlGaAs/GaAs
N (cathode) up
typ. dimensions (µm)
typ. thickness
260 (±20) µm
cathode
gold alloy, 1.5 µm
anode
gold alloy, 0.5 µm
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Typ
Forward voltage
I_F = 20 mA
V_F
1.7
Forward voltage
I_F = 300 mA
V_F
2.0
Reverse voltage
I_R = 10 µA
V_R
5
Radiant power
I_F = 20 mA
Φ_e
1.0
1.4
Radiant power¹
I_F = 300 mA
Φ_e
12
17
Radiant power²
I_F = 300 mA
Φ_e
33
Peak wavelength
I_F = 300 mA
λ_p
685
700
Spectral bandwidth at 50% I_F = 300 mA
∆λ_0.5
40
Switching time
I_F = 100 mA
t_r, t_f
40/30
1_{Measured on bare chip on TO-18 header with EPIGAP equipment}
2_{Measured on epoxy covered chip on TO-18 header with EPIGAP equipment}
Max
Unit
2.0
V
2.4
V
V
mW
mW
mW
710
nm
nm
ns
Labeling
Type
ELС-685-21-05
Lot N°
Φ_e(typ) [mW] V_F(typ) [V]
Packing: Chips on adhesive film with wire-bond side on top
Quantity
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
1 of 1