ELC-670-24 Datasheet, PDF (1/1 Pages) EPIGAP optoelectronic GmbH – LED - Chip

LED - Chip
Preliminary
Radiation
Red
Type
DDH
ELС-670-24
10.04.2007
rev. 03/06
Technology
GaAlAs/GaAlAs
Electrodes
N (cathode) up
310
Ø120
typ. dimensions (µm)
typ. thickness
150 (±25) µm
cathode
gold alloy, 1.5 µm
anode
gold alloy, 0.5 µm
dotted, 25% covered
LED-02
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Forward voltage
I_F = 20 mA
V_F
Typ
1.95
Reverse voltage
I_R = 10 µA
V_R
5
Radiant power¹
I_F = 20 mA
Φ_e
1.0
1.3
Radiant power²
I_F = 20 mA
Φ_e
2.5
Luminous intensity¹
I_F = 20 mA
I_V
12
15
Luminous intensity²
I_F = 20 mA
I_V
30
Peak wavelength
I_F = 20 mA
λ_P
660
670
Spectral bandwidth at 50% I_F = 20 mA
∆λ_0.5
25
Switching time
I_F = 20 mA
t_r, t_f
40
1_{Measured on bare chip on TO-18 header with EPIGAP equipment}
2_{Measured on epoxy covered chip on TO-18 header with EPIGAP equipment}
Labeling
Type
ELС-670-24
Lot N°
Ι_V(typ) [mcd] V_F(typ) [V]
Packing: Chips on adhesive film with wire-bond side on top
Max
Unit
2.2
V
V
mW
mW
mcd
mcd
680
nm
nm
ns
Quantity
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
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