ELC-650-29-50 Datasheet, PDF (1/1 Pages) EPIGAP optoelectronic GmbH – LED - Chip

LED - Chip
Preliminary
Radiation
Red
Type
Point Source
Ø 150
R
30
245
450 + 20
-10
R
155
180
PS-03
ELC-650-29-50
10.04.2007
rev. 04/07
Technology
AlInGaP/GaAs
Electrodes
N (cathode) up
typ. dimensions (µm)
typ. thickness
250 (±20) µm
cathode
gold alloy, 1.5 µm
anode
gold alloy, 0.5 µm
Maximum Ratings
T_amb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Typ
Forward current (DC)
I_F
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Forward voltage
I_F = 5 mA
V_F
Reverse voltage
I_R = 10 µA
V_R
5
Radiant power*
I_F = 5 mA
Φ_e
100
Luminous intensity*
I_F = 5 mA
I_V
5
Peak wavelength
I_F = 5 mA
λ_p
645
Spectral bandwidth at 50% I_F = 5 mA
∆λ_0.5
Switching time
I_F = 5 mA
t_r, t_f
*Measured on bare chip on TO-18 header with EPIGAP equipment
Typ
1.85
200
7
655
20
40/30
Labeling
Type
ELC-650-29-50
Lot N°
I_V(typ) [mcd] V_F(typ) [V]
Packing: Chips on adhesive film with wire-bond side on top
Max
Unit
35
mA
Max
Unit
2.4
V
V
µW
mcd
665
nm
nm
ns
Quantity
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
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