ELC-645-15 Datasheet, PDF (1/1 Pages) EPIGAP optoelectronic GmbH – LED - Chip

LED - Chip
Radiation
Red
Type
Standard
325
Ø120
LED-03
ELС-645-15
21.11.2007
rev. 05
Technology
AlInGaP/GaAs
Electrodes
P (anode) up
typ. dimensions (µm)
typ. thickness
260 (±20) µm
cathode
gold alloy, 0.5 µm
anode
gold alloy, 1.5 µm
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Typ
Forward voltage
I_F = 20 mA
V_F
1.9
Reverse voltage
I_R = 10 µA
V_R
5
Radiant power¹
I_F = 20 mA
Φ_e
1.2
2.0
Radiant power²
I_F = 20 mA
Φ_e
4.0
Luminous intensity¹
I_F = 20 mA
I_V
30
60
Luminous intensity²
I_F = 20 mA
I_V
120
Peak wavelength
I_F = 20 mA
λ_P
635
645
Dominant wavelength
I_F = 20 mA
λ_D
632
Spectral bandwidth at 50% I_F = 20 mA
∆λ_0.5
18
Switching time
I_F = 20 mA
t_r, t_f
15
1_{Measured on bare chip on TO-18 header with EPIGAP equipment}
2_{Measured on epoxy covered chip on TO-18 header with EPIGAP equipment}
Labeling
Type
ELС-645-15
Lot N°
Ι_V(typ) [mcd] V_F(typ) [V]
Packing: Chips on adhesive film with wire-bond side on top
Max
Unit
2.3
V
V
mW
mW
mcd
mcd
655
nm
nm
nm
ns
Quantity
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer.
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
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