ELC-635-14-3 Datasheet, PDF (1/1 Pages) EPIGAP optoelectronic GmbH – LED - Chip

LED - Chip
Preliminary
Radiation
Red
310
Ø120
Type
Standard
LED-02
ELС-635-14-3
10.04.2007
rev. 04/07
Technology
AlInGaP/GaAs
Electrodes
P (anode) up
typ. dimensions (µm)
typ. thickness
260 (±20) µm
cathode
gold alloy, 0.5 µm
anode
gold alloy, 1.5 µm
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Typ
Forward voltage
I_F = 20 mA
V_F
2.0
Reverse voltage
I_R = 10 µA
V_R
5
Radiant power¹
I_F = 20 mA
Φ_e
1.3
Radiant power²
I_F = 20 mA
Φ_e
2.5
Luminous intensity¹
I_F = 20 mA
I_V
55
70
Peak wavelength
I_F = 20 mA
λ_P
630
635
Dominant wavelength
I_F = 20 mA
λ_D
626
Spectral bandwidth at 50% I_F = 20 mA
∆λ_0.5
18
1_{Measured on bare chip on TO-18 header with EPIGAP equipment}
2_{Measured on epoxy covered chip on TO-18 header with EPIGAP equipment}
Labeling
Type
ELС-635-14-3
Lot N°
Ι_V(typ) [mcd] V_F(typ) [V]
Packing: Chips on adhesive film with wire-bond side on top
Max
Unit
2.5
V
V
mW
mW
mcd
640
nm
nm
nm
Quantity
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
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