ELC-630-29-12 Datasheet, PDF (1/1 Pages) EPIGAP optoelectronic GmbH – LED - Chip

LED - Chip
Radiation
Red
Type
Point Source
ELC-630-29-12
25.02.2008
rev. 07
Technology
AlInGaP/GaAs
Electrodes
N (cathode) up
360 ^±20
330
Ø
27
+4
-2
130
typ. dimensions (µm)
typ. thickness
170 (±20) µm
cathode
gold alloy, 1.5 µm
anode
gold alloy, 0.5 µm
PS-13
Maximum Ratings
T_amb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Typ
Max
Unit
Forward current (DC)
I_F
15
mA
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Forward voltage
I_F = 5 mA
V_F
Reverse voltage
I_R = 10 µA
V_R
5
Radiant power*
I_F = 5 mA
Φ_e
30
Luminous intensity*
I_F = 5 mA
I_V
1.2
Peak wavelength
I_F = 5 mA
λ_P
620
Spectral bandwidth at 50% I_F = 5 mA
∆λ_0.5
Switching time
I_F = 5 mA
t_r, t_f
*Measured on bare chip on TO-18 header with EPIGAP equipment
Typ
2.3
40
1.6
630
25
40/30
Labeling
Type
ELC-630-29-12
Lot N°
I_V(typ) [mcd] V_F(typ) [V]
Packing: Chips on adhesive film with wire-bond side on top
Max
Unit
2.6
V
V
µW
mcd
635
nm
nm
ns
Quantity
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer.
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
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