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| ELC-630-29-10 Datasheet, PDF (1/1 Pages) EPIGAP optoelectronic GmbH – LED - Chip | |||
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LED - Chip
Preliminary
Radiation
Red
Type
Point Source
290
Ã
28
+3
-2
85
R
115
350
+ 20
- 10
PS-05
ELC-630-29-10
10.04.2007
rev. 02/06
Technology
AlInGaP/GaAs
Electrodes
N (cathode) up
typ. dimensions (µm)
typ. thickness
170 (±20) µm
cathode
gold alloy, 1.5 µm
anode
gold alloy, 0.5 µm
Maximum Ratings
Tamb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Typ
Forward current (DC)
IF
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Forward voltage
IF = 5 mA
VF
Reverse voltage
IR = 10 µA
VR
5
Radiant power*
IF = 5 mA
Φe
55
Luminous intensity*
IF = 5 mA
IV
2.0
Peak wavelength
IF = 5 mA
λP
625
Spectral bandwidth at 50% IF = 5 mA
âλ0.5
Switching time
IF = 5 mA
tr, tf
*Measured on bare chip on TO-18 header with EPIGAP equipment
Typ
2.3
70
3.0
630
25
40/30
Labeling
Type
ELC-630-29-10
Lot N°
IV(typ) [mcd] VF(typ) [V]
Packing: Chips on adhesive film with wire-bond side on top
Max
Unit
7
mA
Max
Unit
2.6
V
V
µW
mcd
635
nm
nm
ns
Quantity
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
1 of 1
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