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| ELC-590-13 Datasheet, PDF (1/1 Pages) EPIGAP optoelectronic GmbH – LED - Chip | |||
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LED - Chip
Preliminary
Radiation
Yellow
265
110
Type
Standard
ELС-590-13
10.04.2007
rev. 03/06
Technology
AlInGaP/GaAs
Electrodes
P (anode) up
typ. dimensions (µm)
typ. thickness
260 (±20) µm
cathode
gold alloy, 0.5 µm
anode
gold alloy, 1.5 µm
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Typ
Forward voltage
IF = 20 mA
VF
2.0
Reverse voltage
IR = 10 µA
VR
5
Radiant power1
IF = 20 mA
Φe
0.5
0.7
Radiant power2
IF = 20 mA
Φe
1.4
Luminous intensity1
IF = 20 mA
IV
75
110
Luminous intensity2
IF = 20 mA
IV
200
Peak wavelength
IF = 20 mA
λP
592
595
Dominant wavelength
IF = 20 mA
λD
592
Spectral bandwidth at 50% IF = 20 mA
âλ0.5
17
Switching time
IF = 20 mA
tr, tf
30
1Measured on bare chip on TO-18 header with EPIGAP equipment
2Measured on epoxy covered chip on TO-18 header with EPIGAP equipment
Labeling
Type
ELС-590-13
Lot N°
ÎV(typ) [mcd] VF(typ) [V]
Packing: Chips on adhesive film with wire-bond side on top
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
Max
Unit
2.3
V
V
mW
mW
mcd
mcd
598
nm
nm
nm
ns
Quantity
1 of 1
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