ELC-590-11-05 Datasheet, PDF (1/1 Pages) EPIGAP optoelectronic GmbH – LED - Chip

LED - Chip
discontinued
Radiation
Yellow
1000
Type
solderable
ELС-590-11-05
10.04.2007
rev. 02/06
Technology
AlInGaP/GaAs
Electrodes
P (anode) up
typ. dimensions (µm)
typ. thickness
260 (±20) µm
cathode
gold alloy, 1.5 µm
anode
gold alloy, 1.5 µm
PoC-05
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Typ
Forward voltage
I_F = 20 mA
V_F
1.8
Forward voltage
I_F = 100 mA
V_F
2.0
Reverse voltage
I_F = 10 µA
V_R
5
Radiant power¹
I_F = 20 mA
Φ_e
0.45
0.6
Radiant power¹
I_F = 100 mA
Φ_e
2.8
Luminous intensity¹
I_F = 100 mA
Ι_V
400
550
Peak wavelength
I_F = 100 mA
λ_p
592
595
Dominant wavelength
I_F = 100 mA
λ_D
592
Spectral bandwidth at 50% I_F = 100 mA
∆λ_0.5
17
Switching time
I_F = 100 mA
t_r, t_f
25
1_{Measured on bare chip on TO-18 header with EPIGAP equipment}
Labeling
Type
ELС-590-11-05
Lot N°
Φ_e(typ) [mW] V_F(typ) [V]
Packing: Chips on adhesive film with wire-bond side on top
Max
Unit
2.0
V
V
V
mW
mW
mcd
598
nm
nm
nm
ns
Quantity
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
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