ELC-572-13 Datasheet, PDF (1/1 Pages) EPIGAP optoelectronic GmbH – LED - Chip

LED - Chip
Preliminary
Radiation
Yellow-green
265
110
Type
Standard
ELC-572-13
10.04.2007
rev. 03/06
Technology
AlInGaP/GaAs
Electrodes
P (anode) up
typ. dimensions (µm)
typ. thickness
260 (±20) µm
anode
gold alloy, 1.5 µm
cathode
gold alloy, 0.5 µm
dotted, 25% covered
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Typ
Forward voltage
I_F = 20 mA
V_F
2.0
Reverse voltage
I_R = 10 µA
V_R
5
Radiant power¹
I_F = 20 mA
Φ_e
0.09
0.12
Radiant power²
I_F = 20 mA
Φ_e
0.23
Luminous intensity¹
I_F = 20 mA
I_v
12
20
Luminous intensity²
I_F = 20 mA
I_v
38
Peak wavelength
I_F = 20 mA
λ_p
568
572
Dominant wavelength
I_F = 20 mA
λ_D
572
Spectral bandwidth at 50% I_F = 20 mA
∆λ_0.5
15
Switching time
I_F = 20 mA
t_r, t_f
30/20
1_{Measured on bare chip on TO-18 header with EPIGAP equipment}
2_{Measured on epoxy covered chip on TO-18 header with EPIGAP equipment}
Labeling
Type
ELС-572-13
Lot N°
I_v(typ) [mcd] V_F(typ) [V]
Packing: Chips on adhesive film with wire-bond side on top
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
Max
Unit
2.4
V
V
mW
mW
mcd
mcd
577
nm
nm
nm
ns
Quantity
1 of 1